A n-type silicon with doping carrier concentration ND=1016cm⁻³ is given. If this sample is uniformly illuminated, the steady state minority concentration in the sample will be 4×10³ cm⁻³. Then the rate at which electron-hole pairs (EHPs) are generated is
A. 1.00×10¹⁰cm⁻³/s
B. 2.00×10¹⁰cm⁻³/s
C. 1.75×10¹⁰cm⁻³/s
D. 1.25×10¹⁰cm⁻³/s