Problem 1: Consider an ideal pnp bipolar transistor device operating with the following parameters Emitter Base Collector 10 = 2.56 c2/cm3 ple = 6,39c3 /cm3 nco=4.92e5 /cm3 LE = 22.8-4 cm LB = 46.9e-4 cm LC = 39.5e-4 cm DE = 5.18 cm2/sec DB = 22 cm2/sec DC = 15.6 cm2/sec w = 44 cm 4 um Nae = 3.9e17 /cm3 Ndb = 1.57e16/cm3 Nac = 2e14 /cm3 Let A=1.265e-4 cm2, ni = 1e10/cm3, KT=_026ev, Calculate the following at Veb=067235 and Vcb=-1 volts, assuming that W dum at these bias voltages. (6) The current components IEn, IEP, and IE (b) The current components In, ICp, and IC (©) Ibland 1b3, and also what percent of total lb is 163? (d) How do the exponential terms containing Veb compare in size with these containing Veb? (c) What is the cmitter injection efficiency OP (1) What is common base current gain Oc? What is CE current gain 0.x.?