phosphorus atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of p in this silicon material is known to be 5 × 1019 atoms/m3. the predeposition treatment is to be conducted at 950°c for 45 minutes; the surface concentration of p is to be maintained at a constant level of 6.0 × 1026 atoms/m3. drive-in diffusion will be carried out at 1200°c for a period of 2.5 h. for the diffusion of p in si, values of qd and d0 are 3.40 ev and 1.1 × 10−4 m2/s, respectively. (a) calculate the value of q0. enter your answer for part (a) in accordance to the question statement atoms/m2 (b) determine the value of xj for the drive-in diffusion treatment. enter your answer for part (b) in accordance to the question statement m (c) also for the drive-in treatment, compute the position x at which the concentration of p atoms is 1024 m−3. enter your answer for part (c) in accordance to the question statement m